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RFDA2125 Datasheet(PDF) 2 Page - RF Micro Devices |
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RFDA2125 Datasheet(HTML) 2 Page - RF Micro Devices |
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2 / 26 page ![]() RFDA2125 rfmd.com 2 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130326 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage +5.5 VDC DC Supply Current 300 mA Power Dissipation 1.6 W Max RF Input Power for 50Ω Output Load 24 dBm Operating Temperature (TCASE) -40 to +85 °C Storage Temperature -40 to +150 °C Junction Temperature 160 °C ESD Rating (HBM) 1000 (Class 1C) V Moisture Sensitivity Level MSL3 Note: Operation of this device beyond any one of these limits may cause permanent damage. MTTF = 1E6 hours at 160°C junction temperature. Parameter Specification Unit Condition Min. Typ. Max. Overall Temperature=25°C, VCC= 5V, standard application circuit Gain Control Range 31.5 dB Control Interface 6 bit SPI interface Setting Time 250 ns TON, TOFF (10%/90% RF) Impedance 50 Ω Total Supply Voltage 4.75 5.0 5.25 V Total Supply Current 180 mA Thermal Resistance 60.8 °C/W Junction to backside of device Step Accuracy +/- (0.2+5% attenuation setting) dB 728MHz to 746MHz Temperature=25°C, VCC= 5V, standard application circuit Max Gain 37 dB P1dB 26 dBm Max gain Output IP3 44 dBm POUT=10dBm/tone, 1 MHz spacing, Max gain ACPR -67 dBc WCDMA TM1 64DPCH 1C, Output power = 13dBm Gain Flatness 0.1 dB Noise Figure 3.9 dB Max gain Input Return Loss 15 dB Output Return Loss 11 dB Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. |
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