ZTX751

Document number: DS36459 Rev. 3 - 2

2 of 7

www.diodes.com

July 2013

© Diodes Incorporated

ZTX751

A Product Line of

Diodes Incorporated

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-80

V

Collector-Emitter Voltage

-60

V

Emitter-Base Voltage

-7

V

Continuous Collector Current

-2

A

Peak Pulse Current

-6

A

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 6)

1.5

W

Power Dissipation (Note 7)

1

W

Thermal Resistance Junction to Ambient (Note 6)

116

C/W

Thermal Resistance Junction to Ambient (Note 7)

175

C/W

Thermal Resistance Junction to Lead (Note 8)

70

C/W

Operating and Storage Temperature Range

-55 to +200

C

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

 4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

 400

V

C

Notes:

6. For a through-hole device mounted at the seating plane (2.5mm lead length) with the collector lead on 25mm x 25mm 1oz copper

that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.

7. Same as note (5), except the device is mounted on minimum recommended pad layout with 12mm lead length from the bottom of package to the board.

8. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.