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RFPA2545 Datasheet(PDF) 3 Page - RF Micro Devices

Part # RFPA2545
Description  Broadband 4W GaAs HBT Power Amplifier 1400MHz to 2700MHz
PDF  19 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFPA2545 Datasheet(HTML) 3 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS150130
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 19
RFPA2545
Parameter
Specification
Unit
Condition
Min
Typ
Max
2110MHz to 2170MHz
–
Continued
VCC = VBIAS = VREG = 5V, Temp = 25°C, Optimized for
ACPR at Rated Power
Noise Figure
5.7
dB
Input Power (PIN)
19
dBm
Max recommended continuous PIN, VCC = VBIAS = 5V, Load VSWR = 2:1
2590MHz to 2690MHz
VCC = VBIAS = VREG = 5V, Temp = 25°C, Optimized for
ACPR at Rated Power
Frequency
2640
MHz
Gain
11.8
dB
Output IP3
48.1
dBm
POUT 18dBm per tone, 1MHz spacing
ACPR
-51.9
dBc
RF Output power = 25dBm, WCDMA 3GPP 3.5, test model 1, 64 DPCH
P1dB
35.6
dBm
Input Return Loss
-21
dB
Small signal S11
Output Return Loss
-25
dB
Small signal S22
Noise Figure
5.9
dB
Input Power (PIN)
20
dBm
Max recommended continuous PIN, VCC = VBIAS = 5V, Load VSWR = 2:1
Power Supply
Operating Current (Quiescent)
800
mA
At VCC = VBIAS = 5V, VREG = 5V
Thermal Resistance
8
°C/W
Junction-to-back side of IC, at VCC = VBIAS = VREG = 5V, reference Temp = 85°C,
No RF
Shutdown Leakage Current
10
µA
At VCC = VBIAS = 5V, VREG = 5V



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