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2N3906SC Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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2N3906SC Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 3 page  2015. 5. 12 1/3 SEMICONDUCTOR TECHNICAL DATA 2N3906SC EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 0 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. ・Complementary to 2N3904SC. MAXIMUM RATING (Ta=25 ℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC * 350 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ～150 ℃ Note : * Package Mounted On 99.5% Alumina 10 ×8×0.6㎜) |
Similar Part No. - 2N3906SC |
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Similar Description - 2N3906SC |
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