ZXMN2A01FTC datasheet(3/7 Pages) DIODES

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ZXMN2A01F

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS



VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS



µA

VDS = 20V, VGS = 0V

Gate-Body Leakage

IGSS



100

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(th)

0.7



VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance (Note 8)

RDS(ON)



0.12

VGS = 4.5V, ID = 4A



0.225

VGS = 2.5V, ID = 1.5A

Forward Transconductance

gFS



6.1



VDS = 10V, ID = 4A

Diode Forward Voltage (Note 8 & 10)

VSD



0.85

0.95

VGS = 0V, IS = 3.2A, TJ = +25°C

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss



303



VDS = 15V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss



Reverse Transfer Capacitance

Crss



Total Gate Charge (Note 9)



3.0



VDS = 10V, VGS = 10V,

ID = 4A

Gate-Source Charge (Note 9)

Qgs



0.8



Gate-Drain Charge (Note 9)

Qgd



1.0



Turn-On Delay Time (Note 9)

tD(on)



2.49



VDD = 10V , ID =4A,

RG = 6

Ω, V

GS = 5V

Turn-On Rise Time (Note 9)



5.21



Turn-Off Delay Time (Note 9)

tD(off)



7.47



Turn-Off Fall Time (Note 9)



4.62



Reverse Recovery Time

trr



TJ = +25°C, IF = 4A, di/dt= 100A/µs

Reverse Recovery Charge

Qrr



5.65



Notes:

Measured under pulsed conditions. Width=300μs. Duty cycle

≦2%.

9. Switching characteristics are independent of operating junction temperature.

10. Guaranteed by design. Not subject to production testing.

ZXMN2A01F

Document number: DS33513 Rev. 4 - 2

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August 2014

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