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KTC9014SC Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part # KTC9014SC
Description  EPITAXIAL PLANAR NPN TRANSISTOR
PDF  2 Pages
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Manufacturer  KEC [KEC(Korea Electronics)]
Direct Link  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTC9014SC Datasheet(HTML) 1 Page - KEC(Korea Electronics)

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2015. 5. 12
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC9014SC
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Excellent h
FE Linearity
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
・Complementary to KTC9015SC.
MAXIMUM RATING (Ta=25
℃)
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
8
V
Collector Current
IC
100
mA
Collector Power Dissipation
PC *
350
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55
～150
℃
* PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V(BR)CBO
IC=0.05mA, IE=0
80
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0
50
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=0.05mA, IC=0
8
-
-
V
Collector Cut-off Current
ICBO
VCB=55V, IE=0
-
-
0.1
uA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
0.1
uA
DC Current Gain
hFE
VCE=5V, IC=1mA
200
-
300
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=5mA
-
-
0.3
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=100mA, IB=5mA
-
-
1
V
Transition Frequency
fT
VCE=5V, IC=10mA, f=30MHz
150
-
-
MHz


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