The RF MOSFET Line

RF Power Field Effect Transistor

N–Channel Enhancement–Mode MOSFET

Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz

frequency range.

• Specified 50 Volts, 30 MHz Characteristics

Output Power = 600 Watts

Power Gain = 17 dB (Typ)

Efficiency = 45% (Typ)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

125

Vdc

Drain–Gate Voltage

VDGO

125

Vdc

Gate–Source Voltage

VGS

±40

Vdc

Drain Current — Continuous

ID

60

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1350

7.7

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

Operating Junction Temperature

TJ

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.13

°C/W

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF154

600 W, 50 V, 80 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 368–03, STYLE 2

(HOG PAC)

D

G

S

Order this document

by MRF154/D

SEMICONDUCTOR TECHNICAL DATA

1

REV 2