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IRF6629PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF6629PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 07/11/06 IRF6629PbF IRF6629TRPbF DirectFET Power MOSFET Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 4.4mH, RG = 25Ω, IAS = 23A. Notes: PD - 97235 Description The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6629PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6629PbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6629PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. SQ SX ST MQ MX MT MP 0 10203040 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 20V VDS= 13V VDS= 5.0V ID= 23A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 23 Max. 23 180 230 ±20 25 29 1170 l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques 2 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 5 6 7 8 ID = 29A TJ = 25°C TJ = 125°C DirectFET ISOMETRIC MX Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.6m Ω@ 10V 2.1mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 34nC 11nC 4.2nC 27nC 23nC 1.8V |
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