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RFHA1042 Datasheet(PDF) 3 Page - RF Micro Devices

Part # RFHA1042
Description  125W GaN Power Amplifier
PDF  13 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFHA1042 Datasheet(HTML) 3 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS131023
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 13
RFHA1042
Parameter
Specification
Unit
Condition
Min
Typ
Max
Capacitance
CRSS
12.5
pF
VG = -8V, VD = 0V
CISS
160.5
pF
COSS
36
pF
RF Functional Test
Test Conditions: VDSQ = 48V, IDQ = 600mA, T = 25°C, Performance
in a standard tuned test fixture, ACP: ±1.23MHz at 1.5MHz BW
VGS
-3.2
V
VD = 48V, ID = 600mA
Gain
17
18
dB
IS95 (9 channel model, 9.8dB PAR at 0.01% CCDF), POUT = 45.2dBm,
f = 450MHz
Drain Efficiency
35
42
%
Input Return Loss
-13.5
-8
dB
PAR
5
5.7
dB
RF Typical Performance
Test Conditions: VDSQ = 48V, IDQ = 600mA, T = 25°C, Performance
in a standard tuned test fixture, ACP: ±1.23MHz at 1.5MHz BW
Gain
20
dB
3GPP (TM1, 7.5dB PAR at 0.01% CCDF), POUT = 45dBm
Drain Efficiency
41
%
Input Return Loss
-9
dB
Adjacent Channel Power
-36
dBc
Power Gain
17
dB
CW, f = 225MHz
P3dB Power
51.6
dBm
Saturated Drain Efficiency
75
%
Power Gain
16
dB
CW, f = 450MHz
P3dB Output Power
50.4
dBm
Drain Efficiency
47
%



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