Features

1 of 8

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SBF4089Z

DC to 500MHz, CASCADABLE InGaP/GaAs

HBT MMIC AMPLIFIER

RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-

sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-

nology provides broadband performance up to 0.5GHz with excellent thermal

performance. The heterojunction increases breakdown voltage and minimizes leak-

age current between junctions. Cancellation of emitter junction non-linearities

results in higher suppression of intermodulation products. Only a single positive

supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke

are required for operation.

 

S-Parameters vs Frequency +25c

11

11.5

12

12.5

13

13.5

14

14.5

15

15.5

16

0

100

200

300

400

500

600

700

800

900

Freq

-25

-20

-15

-10

-5

0

s21

s11

s22





Stable Gain Over

Temperature



Robust 1000V ESD, Class 1C



Operates From Single Supply



Low Thermal Resistance

Applications



Receiver IF Amplifier



Cellular, PCS, GSM, UMTS



PA Driver Amplifier



Wireless Data, Satellite

Terminals

DS111011



Package: SOT-89

SBF4089ZDC

to 500MHz,

Cascadable

InGaP/GaAs

HBT MMIC

Amplifier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

14.9

dB

70MHz

13.3

14.8

16.3

dB

240MHz

13.2

14.7

16.2

dB

500MHz

Output Power at 1dB Compression

20.1

dBm

70MHz

20.1

dBm

240MHz

18.4

19.9

dBm

400MHz

Output Third Order Intercept Point

40.0

dBm

70MHz

42.0

dBm

240MHz

39.0

41.0

dBm

400MHz

Input Return Loss

13.0

17.0

dB

500MHz

Output Return Loss

12.0

16.0

dB

500MHz

Noise Figure

3.3

4.3

dB

500MHz

Device Operating Voltage

4.5

4.9

5.3

V

Device Operating Current

82

90

98

mA

Thermal Resistance

43

°C/W

junction to lead