Features

1 of 8

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SBF5089Z

DC to 500MHz, CASCADABLE InGaP/GaAs

HBT MMIC AMPLIFIER

RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-

sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-

nology provides broadband performance up to 0.5GHz with excellent thermal

performance. The heterojunction increases breakdown voltage and minimizes leak-

age current between junctions. Cancellation of emitter junction non-linearities

results in higher suppression of intermodulation products. Only a single positive

supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke

are required for operation.

*DLQ

5HWXUQ /RVV YHUVXV )UHTXHQF\ ƒ&

5

7.5

10

12.5

15

17.5

20

22.5

25

0

100

200

300

400

500

600

700

800

900

)UHTXHQF\0+]

-40

-35

-30

-25

-20

-15

-10

-5

0

S21

S11

S22





Stable Gain Over

Temperature



Robust 1000V ESD, Class 1C



Operates From Single Supply



Low Thermal Resistance

Applications



Receiver IF Applications



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

Terminals

DS111011



Package: SOT-89

SBF5089ZDC

to 500MHz,

Cascadable

InGaP/GaAs

HBT MMIC

Amplifier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

20.5

dB

70MHz

18.5

20.0

21.5

dB

240MHz

18.0

19.5

21.0

dB

500MHz

Output Power at 1dB Compression

21

dBm

70MHz

21

dBm

240MHz

19.2

20.7

dBm

400MHz

Output Third Order Intercept Point

39.0

dBm

70MHz

41.0

dBm

240MHz

37.5

39.5

dBm

400MHz

Input Return Loss

14

18

dB

500MHz

Output Return Loss

12.0

16.0

dB

500MHz

Noise Figure

2.8

3.8

dB

500MHz

Device Operating Voltage

4.5

4.9

5.3

V

Device Operating Current

82

90

98

mA

Thermal Resistance

43

°C/W

junction to lead