The RF Line

NPN Silicon

RF Power Transistor

. . . designed primarily for wideband large–signal driver and predriver amplifier

stages in 200–500 MHz frequency range.

• Guaranteed Performance at 400 MHz, 28 Vdc

Output Power = 10 Watts

Power Gain = 12 dB Min

Efficiency = 50% Min

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

• Gold Metallization System for High Reliability

• Computer–Controlled Wirebonding Gives Consistent Input Impedance

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

33

Vdc

Collector–Base Voltage

60

Vdc

Emitter–Base Voltage

4.0

Vdc

Collector Current — Continuous

1.1

1.5

Adc

Derate above 25

°C

27

160

Watts

mW/

°C

Storage Temperature Range

–65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

6.4

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

33

—

—

Vdc

Collector–Emitter Breakdown Voltage

60

—

—

Vdc

Collector–Base Breakdown Voltage

60

—

—

Vdc

Emitter–Base Breakdown Voltage

4.0

—

—

Vdc

Collector Cutoff Current

—

—

1.0

mAdc

ON CHARACTERISTICS

DC Current Gain

20

—

80

—

NOTE:

(continued)

1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.

MRF321

10 W, 400 MHz

RF POWER

TRANSISTOR

NPN SILICON

CASE 244–04, STYLE 1

Order this document

by MRF321/D

SEMICONDUCTOR TECHNICAL DATA

1