The RF Line

NPN Silicon

RF Power Transistor

. . . designed primarily for wideband large–signal output amplifier stages in the

100 to 500 MHz frequency range.

• Guaranteed Performance @ 400 MHz, 28 Vdc

Output Power = 80 Watts over 225 to 400 MHz Band

Minimum Gain = 7.3 dB @ 400 MHz

• Built–In Matching Network for Broadband Operation Using Double Match

Technique

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

• Gold Metallization System for High Reliability Applications

• Characterized for 100 to 500 MHz

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

33

Vdc

Collector–Base Voltage

60

Vdc

Emitter–Base Voltage

4.0

Vdc

Collector Current — Continuous

9.0

12

Adc

Derate above 25

°C

250

1.43

Watts

W/

°C

Storage Temperature Range

–65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.7

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

33

—

—

Vdc

Collector–Emitter Breakdown Voltage

60

—

—

Vdc

Emitter–Base Breakdown Voltage

4.0

—

—

Vdc

Collector–Base Breakdown Voltage

60

—

—

Vdc

Collector Cutoff Current

—

—

5.0

mAdc

ON CHARACTERISTICS

20

—

80

—

DYNAMIC CHARACTERISTICS

Output Capacitance

—

95

125

pF

NOTE:

(continued)

1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.

MRF327

80 W, 100 to 500 MHz

CONTROLLED “Q”

BROADBAND RF POWER

TRANSISTOR

NPN SILICON

CASE 316–01, STYLE 1

Order this document

by MRF327/D

SEMICONDUCTOR TECHNICAL DATA

1

REV 1