Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGA3586Z

DC to 5000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

The SGA3586Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

0

8

16

24

32

01

23

4

5

Frequency (G H z)

-40

-30

-20

-10

0

GA IN

IR L

OR L

Gain & Return Loss vs. Frequency

I

T



High Gain: 25dB at 850MHz



Cascadable 50

Gain Block



at 1950MHz



Low Noise Figure: 2.5dB typ.

at 1950MHz



Low Current Draw: 35mA typ.



Single Voltage Supply Opera-

tion

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS130729



Package: SOT-86

SGA3586ZDC

to 5000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

22.5

25.0

27.5

dB

850MHz

18.0

20.0

22.0

dB

1950MHz

18.5

dB

2400MHz

Output Power at 1dB Compression

13.0

dBm

850MHz

11.0

12.5

dBm

1950MHz

Output Third Intercept Point

24.5

dBm

850MHz

23.0

25.0

dBm

1950MHz

Bandwidth Determined by Return

Loss

5000

MHz

>10dB

Input Return Loss

9.5

11.0

dB

1950MHz

Output Return Loss

14.0

20.0

dB

1950MHz

Noise Figure

2.5

3.5

dB

1950MHz

Device Operating Voltage

3.0

3.25

3.5

V

Device Operating Current

31

35

39

mA

Thermal Resistance

(Junction - Lead)

97

°C/W