Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SGA6489Z

DC to 3500MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

The SGA6489Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

0

6

12

18

24

0

1

23

45

Frequency (GHz)

-40

-30

-20

-10

0

GAIN

IRL

ORL

Gain & Return Loss vs. Frequency

V



High Gain: 17.5dB at

1950MHz



Cascadable 50





Operates from Single Supply



Low Thermal Resistance

Package

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS111014



Package: SOT-89

SGA6489ZLow

Noise, High

Gain SiGe HBT

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

18.4

20.1

22.4

dB

850MHz

17.5

dB

1950MHz

16.5

dB

2400MHz

Output Power at 1dB Compression

20.7

dBm

850MHz

18.7

dBm

1950MHz

Output Third Intercept Point

34.0

dBm

850MHz

32.0

dBm

1950MHz

Bandwidth Determined by Return

Loss

3500

MHz

>10dB

Input Return Loss

14.4

dB

1950MHz

Output Return Loss

10.9

dB

1950MHz

Noise Figure

3.0

dB

1950MHz

Device Operating Voltage

4.7

5.1

5.5

V

Device Operating Current

67

75

83

mA

Thermal Resistance

(Junction - Lead)

97

°C/W