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MMBTA93 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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MMBTA93 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  1998. 6. 15 1/2 SEMICONDUCTOR TECHNICAL DATA MMBTA92/93 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 1 HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES ・Complementary to MMBTA42/43. MAXIMUM RATING (Ta=25 ℃) DIM MILLIMETERS SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 Q 0.1 MAX 0.20 MIN 1.00+0.20/-0.10 M E 1 2 3 B 1.30 MAX LL PP P7 + _ Q 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25 ℃) *Pulse Test : Pulse Width ≦300μS, Duty Cycle≦2.0% * : Package Mounted On 99.5% Alumina 10 ×8×0.6mm. CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage MMBTA92 VCBO -300 V MMBTA93 -200 Collector-Emitter Voltage MMBTA92 VCEO -300 V MMBTA93 -200 Emitter-Base Voltage VEBO -5.0 V Collector Current IC -500 mA Emitter Current IE 500 mA Collector Power Dissipation PC * 350 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 ～150 ℃ Type Name Marking MMBTA92 MMBTA93 Lot No. YV Type Name Lot No. YW CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage MMBTA92 V(BR)CBO IC=-100μ A, IE=0 -300 - - V MMBTA93 -200 - - Collector-Emitter Breakdown Voltage MMBTA92 V(BE)CEO IC=-1.0mA, IB=0 -300 - - V MMBTA93 -200 - - DC Current Gain * hFE IC=-1.0mA, VCE=-10V 25 - - IC=-10mA, VCE=-10V 40 - - IC=-30mA, VCE=-10V 25 - - Collector-Emitter Saturation Voltage * VCE(sat) IC=-20mA, IB=-2.0mA - - -0.5 V Base-Emitter Saturation Voltage * VBE(sat) IC=-20mA, IB=-2.0mA - - -0.9 V Transition Frequency fT VCE=-20V, IC=-10mA, f=100MHz 50 - - MHz Collector Output Capacitance MMBTA92 Cob VCB=-20V, IE=0, f=1MHz - - 6.0 pF MMBTA93 - - 8.0 |
Similar Part No. - MMBTA93 |
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Similar Description - MMBTA93 |
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