RFHA3942D datasheet(2/9 Pages) RFMD

2 / 9 page

RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131024

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of

third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended

application circuitry and specifications at any time without prior notice.

2 of 9

RFHA3942D

Absolute Maximum Ratings

Parameter

Rating

Unit

Drain Voltage (VD)

150

Gate Voltage (VG)

-8 to +2

Gate Current (IG)

Ruggedness (VSWR)

10:1

Storage Temperature Range

-55 to +125

°C

Operating Junction Temperature (TJ)

250

°C

Human Body Model

Class 1A

MTTF (TJ < 200°C, 95% Confidence Limits)*

3.2E + 06

Hours

MTTF (TJ < 250°C, 95% Confidence Limits)*

5.3E + 04

Hours

Thermal Resistance, Rth (junction to case) measured

at TC = 85°C, DC bias only

3.0

°C/W

Caution! ESD sensitive device.

RFMD Green: RoHS compliant per EU

Directive 2011/65/EU, halogen free per

IEC 61249-2-21, <1000ppm each of

antimony trioxide in polymeric materials

and red phosphorus as a flame retardant,

and <2% antimony solder.

Exceeding any one or a combination of the Absolute

Maximum Rating conditions may cause permanent

damage to the device. Extended application of Absolute

Maximum Rating conditions to the device may reduce

device reliability. Specified typical performance or

functional operation of the device under Absolute

Maximum Rating conditions is not implied.

* MTTF

– median time to failure for wear-out failure mode (30% I

DSS degradation) which is determined by the technology process reliability.

Refer to product qualification report for FIT (random) failure rate.

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current

must not exceed the maximum operating values specified in the table above.

**Thermal resistance assumes AuSn die attach on 1.5mm thick CPC carrier similar to Kyocera A1933. User will need to define this specification

in the final application and ensure bias conditions satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE to maintain maximum operating

junction temperature at MTTF.

Nominal Operating Parameters

Parameter

Specification

Unit

Condition

Min

Typ

Max

Recommended Operating

Conditions

Drain Voltage (VDSQ)

Gate Voltage (VGSQ)

-1.2

-0.9

-0.6

Drain Bias Current (IDSQ)

300

Frequency of Operation

4000

MHz

Die Capacitance from Packaged Device Measurements

(Package Capacitance Removed During Calibration)

CRSS

1.4

VG = -8V, VD = 0V

CISS

COSS

DC Functional Test

IG(ON) – Forward Bias Diode Gate

Current

VG = 1.1V, VD = 0V

IG(OFF) – Gate Leakage

VG = -8V, VD = 0V

ID(OFF) – Drain Leakage

0.2

ID(OFF) – 48V Drain Leakage

2.5

VG = -8V, ID = 48A

RFHA3942D Datasheet(PDF) 2 Page - RF Micro Devices

RFHA3942D Datasheet(HTML) 2 Page - RF Micro Devices

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL