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RFHA3944 Datasheet(PDF) 3 Page - RF Micro Devices

Part # RFHA3944
Description  65W GaN Wide-Band Power Amplifier
PDF  11 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFHA3944 Datasheet(HTML) 3 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS131024
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 11
RFHA3944
Parameter
Specification
Unit
Condition
Min
Typ
Max
Capacitance
CRSS
3.5
pF
VG = -8V, VD = 0V
CISS
29
pF
COSS
21
pF
RF Functional Test
Test Conditions: VDSQ = 48V, IDSQ = 540mA, T = 25°C, WCDMA
ACP measured at ±5.0MHz at 3.84MHz BW, Performance in a
standard tuned test fixture
VGSQ
-1.3
-0.9
-0.6
V
VDSQ = 48V, IDSQ = 540mA
Gain
13.5
14.5
dB
IS95 (9 channel model, 9.8dB PAR at 0.01% CCDF), POUT = 42.4dBm,
f = 2140MHz
Drain Efficiency
27.5
31
%
Input Return Loss
-11
-7
dB
Output PAR (CCDF at 0.01%)
5.0
6.0
dB
RF Typical Performance
Test Conditions: VDSQ = 48V, IDSQ = 540mA, T = 25°C, WCDMA
ACP measured at ±5.0MHz at 3.84MHz BW, Performance in a
standard tuned test fixture
Gain
15.0
dB
WCDMA (3GPP TM1, 7.5dB PAR at 0.01% CCDF), POUT = 41.8dBm,
f = 2140MHz
Drain Efficiency
28.0
%
Input Return Loss
-12
dB
Adjacent Channel Power
-42
dBc
Gain
14.5
dB
CW, f = 2140MHz
Output Power
48.1
dBm
Drain Efficiency
55
%



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