RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131029

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of

third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended

application circuitry and specifications at any time without prior notice.

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RFSW2100D

Bias Instruction for RFSW2100D Die

ESD Sensitive Material. Please use proper ESD precautions when handling devices die.

Die must be mounted with minimal die attach voids for proper thermal dissipation and power handling capability. This device uses

depletion mode HEMT

’s and must have recommended gate voltage applied prior to applying RF power.

1.

Mount device on carrier or package with minimal die attach voiding and apply proper heat removal techniques.

2.

Connect ground to the ground supply terminal.

3.

Ensure that all 3 RF ports are connected to external RF connections through dc blocking elements for protection to RF

connected devices in case of GaN RF switch failure event.

4.

5.

6.

Apply RF signal.

Switch Status

Logic Control

RF1 to RFC

RF2 to RFC

Off

On

High

Low

On

Off

Low

High

High = 0V

Low = -20V to -40V