Specifications Subject to Change Without Notice.

M/A-COM Inc.

1

North America: Tel. (800) 366-2266

♦

Asia/Pacific: Tel. +81 3 3263-8761

♦

Europe:

Tel. +44 (1344) 869-595

Fax (800) 618-8883

Fax +81 3 3263-8769

Fax +44 (1344) 300-020

GaAs Foundry Services

PROCESS PE3

PE3

V2.00

Features

•

0.5

µm MBE MESFET Technology for High Power

Applications

•

MMICs up to 18 GHz

•

100 mm wafer diameter

•

Layout and design assistance

•

Space qualification

•

Custom test and packaging

Description

M/A-COM’s PE3 process utilizes molecular beam epitaxy (MBE) to

implement a MESFET active layer structure that achieves high

efficiency and breakdown for multi-watt power applications thru

18GHz.

The focus is on products for moderate to high volume

applications.

M/A-COM offers a full compliment of foundry

services to meet the requirements for custom designing a MMIC-

based die or packaged product.

Typical RF Performance

FC06 (6X150) 900 um FET

Param.

Test Conditions

Freq.

Typ. Val.

MAG

2/12GHz

22/13.5dB

2/12GHz

680/525mW/mm

PAE

2/12GHz

50/41%

ft

------

20GHz

Ordering Information

Part Number

Description

FE43-0001

PE3 Wafer

SVC6310

Mask Set

°°C

Parameter

Test Conditions

Units

Min.

Typ.

Max.

200um PCM FET

IDSS

VDS = 3V, VGS = 0V

mA/mm

180

240

310

DC GM

VDS = 3V, IDS = 0.5IDSS

mS/mm

125

150

185

Vp

VDS = 3V, IDS = 0.025IDSS

V

-1.2

-1.8

-2.2

BVgd

IG = 0.1mA/mm

V

-11

-15

-

RF GM

VDS = 3V, IDS = 0.5IDSS

mS

25

32

45

Cgs

VDS = 3V, IDS = 0.5IDSS

pF

.140

.200

.280

Cgd

VDS = 3V, IDS = 0.5IDSS

pF

.015

.022

.028

Cds

VDS = 3V, IDS = 0.5IDSS

pF

.025

.038

.050

Ft

VDS = 3V, IDS = 0.5IDSS

GHz

20

26

34

Sheet Resistances

NDRS (N- GaAs)

l = 20mA

Ohms/sq

340

375

410

NCRS (NiCr)

l = 10mA

Ohms/sq

42

50

58

GFRS (Gate Metal)

l = 20mA

Ohms/sq

-

.027

.040

MIM Capacitors

Capacitance/unit area

f = 1MHz

pF/mm

2

360

400

440

Capacitor Leakage

V = 10V

µA

-

-

0.5