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SGL0263Z Datasheet(PDF) 1 Page - RF Micro Devices |
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SGL0263Z Datasheet(HTML) 1 Page - RF Micro Devices |
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1 / 6 page  Features 1 of 6 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT SGL0263Z 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50GHz. This device has an inter- nal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL0263Z has been characterized at VD=3V for low power and 4V for medium power applications. Only two DC- blocking capacitors, 2 input matching components, a bias resistor, and an optional RF choke are required for operation from 1400MHz to 2500MHz. RF In RF Out / V S V S Temperature Compensation Circuit High Input/Output Intercept Low Noise Figure: 1.3dB typ. at 1900MHz Low Power Consumption Single Voltage Supply Opera- tion Internal Temperature Com- pensation Applications Receivers, GPS, RFID Cellular, Fixed Wireless, Land Mobile DS111011 Package: SOT-363 SGL0263Z 1400MHz to 2500MHz Sili- con Germa- nium Cascadable Low Noise Amplifier Parameter Specification (VS=3V) Specification (VS=4V) Unit Condition Min. Typ. Max. Min. Typ. Max. Small Signal Gain 12.1 13.4 14.7 13.8 dB 1900MHz 12.5 12.9 dB 2100MHz 10.8 11.3 dB 2400MHz Output Power at 1dB Compres- sion 3.5 5.5 11.4 dBm 1900MHz 6.8 12.3 dBm 2100MHz 7.9 12.8 dBm 2400MHz Input Third Order Intercept Point Tone Spacing=1MHz, POUT per tone=-13dBm 7.5 9.5 15.1 dBm 1900MHz 13.5 16.8 dBm 2100MHz 15.5 18.4 dBm 2400MHz Noise Figure 1.3 1.7 1.9 dB 1900MHz, ZS=50 1.5 2.1 dB 2100MHz, ZS=50 2.0 2.8 dB 2400MHz, ZS=50 Input Return Loss 10.0 13.3 21.9 dB 1900MHz Output Return Loss 10.0 12.9 17.4 dB 1900MHz Reverse Isolation 20.7 21.0 dB 1900MHz Device Current 9.0 12.5 15.0 23.0 mA Thermal Resistance (Junction to Lead) 255 °C/W Test Conditions: 1400MHz to 2500MHz Application Circuit, TLEAD=25°C, Z0=ZL=50 |
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