Features

1 of 8

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SPF5344Z

0.8GHz to 4GHz, GaAs pHEMT 2-STAGE LOW

NOISE MMIC AMPLIFIER

The SPF5344Z is a high performance 2-Stage pHEMT MMIC LNA designed

for use from 0.8GHz to 4GHz. It offers low noise figure and high linearity in

a gain block configuration. Its single-supply operation and integrated

matching networks make implementation remarkably simple. The off-chip

interstage choke and DC block allow for optimum performance tuning.

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

-40

-30

-20

-10

0

10

20

30

1.7

1.8

1.9

2.0

2.1

2.2

2.3

2.4

2.5

Frequency (GHz)

Gain, RL & NF versus Frequency

Gain

IRL

ORL

NF

S11

S21

S22

NF



Low Noise Figure=0.80dB at

2.0GHz



Gain=24.5dB at 2.0GHz



OIP3=39dBm at 2.0GHz



Excellent Return Loss:

S11>20dB, S22>20dB at

2.0GHz





Single-Supply Operation: 5V at

Idq=120mA



Flexible Biasing Options: 3-5V,

Adjustable Current



Broadband Internal Matching

Applications



Cellular, PCS, W-CDMA, ISM,

WiMAX Receivers



PA Driver Amplifier



Low Noise, High Linearity Gain

Block Applications

DS110805



SPF5344Z

0.8GHz to

4GHz, GaAs

pHEMT 2-

Stage Low

Noise MMIC

Amplifier

Parameter

Frequency=0.9GHz

Frequency=2.0GHz

Frequency=2.2GHz

Unit

Condition

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Small Signal Power Gain

34.5

22.1

24.5

26.9

22.5

dB

Noise Figure

0.70

0.80

0.90

dB

Output Third Order

Intercept Point

35.5

35

39.0

39.0

dBm

Output Power at 1dB

Compression

21.8

22.4

22.7

dBm

Input Return Loss

25.0

dB

Output Return Loss

25.0

dB

Reverse Isolation

32.5

dB

Device Operating Voltage

5.0

5.0

5.0

V

Device Operating Current

(Quiescent)

100

120

160

100

120

160

100

120

160

mA

Thermal Resistance

(junction-to-lead)

1st stage

65

65

65

°C/W

Thermal Resistance

(junction-to-lead)

2nd stage

65

65

65

°C/W

The typical noise figure values include evaluation board losses.