2SB1122 datasheet(2/4 Pages) ONSEMI

2 / 4 page

2SB1122

No.2040-2/4

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Collector Dissipation

When mounted on ceramic substrate (250mm2×0.8mm)

1.3

Junction Temperature

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=--50V, IE=0A

--100

Emitter Cutoff Current

IEBO

VEB=--4V, IC=0A

--100

DC Current Gain

hFE1VCE=--2V, IC=--100mA

140*

400*

hFE2VCE=--2V, IC=--1A

Gain-Bandwidth Product

VCE=--10V, IC=--50mA

150

MHz

Output Capacitance

Cob

VCB=--10V, f=1MHz

Collector to Emitter Saturation Voltage

VCE(sat)

IC=--500mA, IB=--50mA

--180

--500

Base to Emitter Saturation Voltage

VBE(sat)

IC=--500mA, IB=--50mA

--0.9

--1.2

Collector to Base Breakdown Voltage

V(BR)CBO

IC=--10μA, IE=0A

--60

Collector to Emitter Breakdown Voltage

V(BR)CEO

IC=--1mA, RBE=∞

--50

Emitter to Base Breakdown Voltage

V(BR)EBO

IE=--10μA, IC=0A

--5

Turn-ON Time

ton

See speciﬁed Test Circuit.

Storage Time

tstg

300

Fall Time

* : 2SB1122 is classiﬁed by 100mA hFE as follows :

Rank

hFE

140 to 280

200 to 400

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SB1122S-TD-E

PCP

1,000pcs./reel

Pb Free

2SB1122T-TD-E

PCP

1,000pcs./reel

VCC= --25V

VBE=5V

INPUT

OUTPUT

100

μF

470

μF

PW=20

μs

IC=10IB1= --10IB2= --500mA

D.C.

≤1%

IB1

IB2

IC -- VCE

Collector to Emitter Voltage, VCE -- V

--1.0

--0.6

--0.4

--0.2

--0.8

--1

--2

--5

--4

--3

IB=0mA

ITR08877

--1mA

--2mA

--8mA

--6mA

--4mA

--10mA

--12mA

IC -- VBE

Base to Emitter Voltage, VBE -- V

--0.2

--0.4

--0.6

--0.8

--1.2

--1.0

--1200

--1000

--800

--600

--400

--200

ITR08879

VCE= --2V

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