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2SD1683 Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2SD1683
Description  Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SD1683 Datasheet(HTML) 2 Page - ON Semiconductor

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2SB1143 / 2SD1683
No.2063-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1
μA
DC Current Gain
hFE1VCE=(--)2V, IC=(--)100mA
100*
560*
hFE2VCE=(--)2V, IC=(--)3A
40
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
150
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(39)25
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)2A, IB=(--)100mA
(--350)190
(--700)500
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)2A, IB=(--)100mA
(--)0.94
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-On Time
ton
See specified Test Circuit.
(70)70
ns
Storage Time
tstg
(450)650
ns
Fall Time
tf
(30)35
ns
* : The 2SB1143/2SD1683 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SB1143S
TO-126ML
200pcs./bag
Pb Free
2SB1143T
TO-126ML
200pcs./bag
2SD1683S
TO-126ML
200pcs./bag
2SD1683T
TO-126ML
200pcs./bag
IC=10IB1= --10IB2=1A
(For PNP, the polarity is reversed.)
VR
RB
VCC=25V
VBE= --5V
+
+
50Ω
INPUT
OUTPUT
RL
25Ω
100μF
470μF
PW=20μs
IB1
D.C.≤1%
IB2



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