IRFP7530PBF datasheet(2/10 Pages) IRF

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November 7, 2014

IRFP7530PbF

Absolute Maximum Rating

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

281

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

199

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

195

IDM

Pulsed Drain Current 

760

PD @TC = 25°C

Maximum Power Dissipation

341

Linear Derating Factor

2.3

W/°C

VGS

Gate-to-Source Voltage

± 20

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Avalanche Characteristics

EAS (Thermally limited)

Single Pulse Avalanche Energy 

557

EAS (Thermally limited)

Single Pulse Avalanche Energy 

1102

IAR

Avalanche Current 

See Fig 15, 16, 23a, 23b

EAR

Repetitive Avalanche Energy 

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RJC

Junction-to-Case 

–––

0.44

°C/W

RCS

Case-to-Sink, Flat Greased Surface

0.24

–––

RJA

Junction-to-Ambient 

–––

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

–––

mV/°C Reference to 25°C, ID = 1mA 

RDS(on)

Static Drain-to-Source On-Resistance

–––

1.65 2.00

VGS = 10V, ID = 100A 

–––

2.10

–––

VGS = 6.0V, ID = 50A 

VGS(th)

Gate Threshold Voltage

2.1

–––

3.7

VDS = VGS, ID = 250µA

IDSS

Drain-to-Source Leakage Current

–––

1.0

µA

VDS =60 V, VGS = 0V

–––

150

VDS =60V,VGS = 0V,TJ =125°C

IGSS

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -20V

Gate Resistance

–––

2.1

–––





Notes:



Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by

source bonding technology. Note that current limitations arising from heating of the device leads may occur with

some lead mounting arrangements. (Refer to AN-1140)



Repetitive rating; pulse width limited by max. junction temperature.



Limited by TJmax, starting TJ = 25°C, L = 111µH, RG = 50, IAS = 100A, VGS =10V.



ISD  100A, di/dt  1338A/µs, VDD  V(BR)DSS, TJ 175°C.



Pulse width

 400µs; duty cycle  2%.



Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.



Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.



R is measured at TJ approximately 90°C.



Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 47A, VGS =10V.

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