DTA143EE datasheet(1/12 Pages) ONSEMI

Part #	DTA143EE

Description	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 kA

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Manufacturer	ONSEMI [ON Semiconductor]

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March, 2013 − Rev. 2

1

Publication Order Number:

DTA143E/D

MUN2132, MMUN2132L,

MUN5132, DTA143EE,

DTA143EM3, NSBA143EF3

Digital Transistors (BRT)

R1 = 4.7 kW, R2 = 4.7 kW

PNP Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector−Base Voltage

VCBO

50

Vdc

Collector−Emitter Voltage

VCEO

50

Vdc

Collector Current − Continuous

IC

100

mAdc

Input Forward Voltage

VIN(fwd)

30

Vdc

Input Reverse Voltage

VIN(rev)

10

Vdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 1

BASE

(INPUT)

R1

R2

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

SC−75

CASE 463

STYLE 1

MARKING DIAGRAMS

XXX

= Specific Device Code

M

= Date Code*

G

=Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

SC−59

CASE 318D

STYLE 1

SOT−23

CASE 318

STYLE 6

SC−70/SOT−323

CASE 419

STYLE 3

SOT−723

CASE 631AA

STYLE 1

SOT−1123

CASE 524AA

STYLE 1

XX MG

G

1

XXX MG

G

XX MG

G

1

XX M

1

X M

XX M

1

PIN CONNECTIONS

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Similar Description - DTA143EE

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MUN2132	145Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k September, 2012 ??Rev. 1
	MUN2133	146Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k September, 2012 ??Rev. 1
	MUN2216	128Kb / 10P	Digital Transistors (BRT) R1 = 4.7 k, R2 = k February, 2013 ??Rev. 1
	MUN2232	140Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k August, 2012 ??Rev. 0
	MUN2233	149Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k August, 2012 ??Rev. 0
	MUN5332DW1	167Kb / 10P	Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k September, 2012 ??Rev. 0
	MUN2133	150Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 kA October, 2013 ??Rev. 6
	MUN2233	110Kb / 12P	Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k January, 2015 ??Rev. 5
NXP Semiconductors	PEMD15_PUMD15	918Kb / 16P	NPN/PNP resistor-equipped transistors R1 = 4.7 k?? R2 = 4.7 k? Rev. 4-19 December 2011
Nexperia B.V. All right...	PDTA143E_SER	1Mb / 17P	PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k Rev. 8 - 8 December 2011

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