MS15C37 datasheet(2/8 Pages) BWTECH

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MS15C37

N & P-Channel 30-V (D-S) MOSFET

Publication Order Number: [MS15C37]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Nch Limit

Pch Limit

Unit

VDS

Drain-Source Voltage

-30

VGS

Gate-Source Voltage

±20

Continuous Drain Current

a (T

A =25°C)

1.5

1.0

Continuous Drain Current

a (T

A =70°C)

1.25

0.86

IDM

Pulsed Drain Current

-10

Continuous Source Current (Diode Conduction)

0.36

-0.35

Power Dissipation

a (T

A =25°C)

0.3

Power Dissipation

a (T

A =70°C)

0.21

TJ/TSTG

Operating Junction and Storage Temperature

-55 to 150

°C

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RTHJA

Maximum Junction-to-Ambient C/W

a (t <= 10 sec)

415

°C/W

Maximum Junction-to-Ambient C/W

a (Steady-State)

460

Notes:

Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS , ID = -250 μA (Nch)

VDS = VGS , ID = -250 μA (Pch)

-1

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = ±20 V (Pch)

±10

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V , VGS = 0 V (Nch)

VDS = -24 V , VGS = 0 V (Pch)

-1

ID(on)

On-State Drain Current

VDS = 5 V , VGS = 10 V (Nch)

VDS = -5 V , VGS = -10 V (Pch)

1.8

1.2

RDS(on)

Drain-Source On-Resistance

VGS = 10 V , ID = 1.1 A (Nch)

VGS = 4.5 V , ID = 0.88 A (Pch)

VGS = -10 V , ID = -0.8 A (Nch)

VGS = -4.5 V , ID = -0.64 A (Pch)

130

190

290

gfs

Forward Tranconductance

VDS = 15 V , ID = 1.1 A (Nch)

VDS = -15 V , ID = -0.8 A (Pch)

VSD

Diode Forward Voltage

IS = 0.18 V , VGS = 0 V (Nch)

IS = 0.175 V, VGS = 0 V (Pch)

0.74

-0.79

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