MS45C41 datasheet(2/8 Pages) BWTECH

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MS45C41

N & P-Channel 40-V (D-S) MOSFET

Publication Order Number: [MS45C41]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

±20

Continuous Drain Current

a (T

A =25°C)

5.8

Continuous Drain Current

a (T

A =70°C)

4.5

IDM

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

2.6

Power Dissipation

a (T

A =25°C)

2.1

Power Dissipation

a (T

A =70°C)

1.3

TJ/TSTG

Operating Junction and Storage Temperature

-55 to 150

°C

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RθJA

Maximum Junction-to-Ambient

a (t <= 10 sec)

62.5

°C/W

Maximum Junction-to-Ambient

a (Steady-State)

110

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS, ID = 250μA (N-ch)

VDS = VGS, ID = -250μA (P-ch)

-1

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = ±20 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = 32 V , VGS = 0 V (N-ch)

VDS = -32 V , VGS = 0 V (P-ch)

-1

ID(on)

On-State Drain Current

VDS = 5 V, VGs = 10 V (N-ch)

VDS = -5 V, VGs = -10 V (P-ch)

-10

DS(on)

Drain-Source On-Resistance

VGS = 10 V, ID = 5.3 A (N-ch)

VGS = 4.5 V, ID = 4.4 A (N-ch)

VGS = -10 V, ID = -3.6 A (N-ch)

VGS = -4.5 V, ID = -2.6 A (N-ch)

125

gfs

Forward Tranconductance

VGS = 15 V, ID = 5.3 A (N-ch)

VGS = -15 V, ID = -3.6 A (P-ch)

VSD

Diode Forward Voltage

IS = 1.3 A , VGS = 0 V (N-ch)

IS = -1.2 A , VGS = 0 V (P-ch)

0.77

-0.81

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