MS48N40 datasheet(2/4 Pages) BWTECH

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MS48N40

N-Channel 40-V (D-S) MOSFET

Publication Order Number: [MS48N40]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

±20

Continuous Drain Current

a (T

A =25°C)

±9.7

Continuous Drain Current

a (T

A =70°C)

±7.2

IDM

Pulsed Drain Current

±50

Continuous Source Current (Diode Conduction)

2.3

Power Dissipation

a (T

A =25°C)

3.1

Power Dissipation

a (T

A =70°C)

2.2

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RθJA

Maximum Junction-to-Ambient

a (t <= 10 sec)

°C/W

Maximum Junction-to-Ambient

a (Steady-State)

Notes:

Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Threshold Voltage

VDS = VGS , ID = -250μA

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = 20 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V , VGS = 0 V

VDS = 24 V , VGS = 0 V , TJ= 55°C

ID(on)

On-State Drain Current

VDS = 5 V , VGS = 10 V

DS(on)

Drain-Source On-Resistance

VGS = 10 V , ID = 9.7 A

VGS = 4.5 V , ID = 8.8 A

gfs

Forward Tranconductance

VDS = 15 V , ID = 9.7 A

VSD

Diode Forward Voltage

IS = 2.3 A , VGS = 0 V

0.7

Dynamic

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

VDS = 15 V , ID = 9.7 A ,

VGS = 4.5 V

12.5

Qgs

Gate-Source Charge

2.6

Qgd

Gate-Drain Charge

4.6

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