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MS85N06 Datasheet(PDF) 2 Page - Bruckewell Technology LTD

Part # MS85N06
Description  Improved dv/dt Capability, High Ruggedness
PDF  3 Pages
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Manufacturer  BWTECH [Bruckewell Technology LTD]
Direct Link  http://www.bruckewell-semi.com
Logo BWTECH - Bruckewell Technology LTD

MS85N06 Datasheet(HTML) 2 Page - Bruckewell Technology LTD

  MS85N06 Datasheet HTML 1Page - Bruckewell Technology LTD MS85N06 Datasheet HTML 2Page - Bruckewell Technology LTD MS85N06 Datasheet HTML 3Page - Bruckewell Technology LTD  
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Preliminary Data Sheet
Bruckewell Technology Corp., Ltd.
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
––
0.85
RθJA
Junction-to-Ambient
––
62.5
℃
/W
Electrical Characteristics
(Tc=25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Type
Max
Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0 V , ID=250µA
60
––
––
V
△
BVDSS
/△TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, Referenced to 25℃
––
0.07
––
V/℃
VDS=60V , VGS= 0 V
––
––
10
µA
IDSS
Zero Gate Voltage Drain Current
VDS=48V , VC= 125℃
––
––
100
µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS=20V , VDS=0 V
––
––
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS=-20V , VDS=0 V
––
––
–100
nA
On Characteristics
VGS
Gate Threshold Voltage
VDS=VGS,ID=250µA
2.0
––
4.0
V
RDS(ON)
Static Drain-Source
On-Resistance
VGS=10V,ID=42.5A
––
10.5
13
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
––
2500
––
pF
Coss
Output Capacitance
––
900
––
pF
Crss
Reverse Transfer Capacitance
VDS=25V, VGS=0V,
f=1.0MHz
––
160
––
pF
Switching Characteristics
td(on)
Turn-On Time
––
40
--
ns
tr
Turn-On Rise Time
––
200
--
ns
td(off)
Turn-Off Delay Time
––
150
--
ns
tf
Turn-Off Fall Time
VDS=42.5 V, ID=30A,
RG=25Ω
––
150
--
ns
Qg
Total Gate Charge
––
70
--
nC
Qgs
Gate-Source Charge
––
20
––
nC
Qgd
Gate-Drain Charge
VDS=48V,ID=85A,
VGS=10V
––
30
––
nC



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