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MSRF860G Datasheet(PDF) 2 Page - ON Semiconductor |
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MSRF860G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() MSR860G, MSRF860G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (IF = 8.0 A) (Note 1) Maximum Typical VF TJ = 25°C TJ = 150°C V 1.7 1.4 1.3 1.1 Maximum Instantaneous Reverse Current (VR = 600 V) Maximum Typical IR TJ = 25°C TJ = 150°C mA 10 2.0 1000 80 Maximum Reverse Recovery Time (Note 2) (VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms) Maximum Typical trr TJ = 25°C TJ = 125°C ns 120 95 190 125 Typical Recovery Softness Factor (VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms) s = tb/ta 2.5 3.0 Maximum Peak Reverse Recovery Current (VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms) IRRM 5.8 8.3 A Maximum Reverse Recovery Charge (VR = 400 V, IF = 8.0 A, di/dt = 200 A/ms) QRR 350 700 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2% 2. TRR measured projecting from 25% of IRRM to zero current TYPICAL ELECTRICAL CHARACTERISTICS Figure 1. Typical Forward Voltage VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current VF, FORWARD VOLTAGE DROP (VOLTS) TC, CASE TEMPERATURE (°C) Figure 3. Current Derating, Case 100 10 600 400 300 200 100 100 10 1 1.9 1.3 0.9 0.5 1 160 120 40 0 2 4 6 14 0 500 0.1 10 8 12 TJ = 150°C 100 °C 25 °C RATED VR APPLIED 80 dc SQUARE WAVE 1.7 1.1 0.7 1.5 TJ = 150°C 100 °C 25 °C 125 °C |
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