IRFS7530-7PPBF datasheet(2/11 Pages) IRF

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March 5, 2015

IRFS7530-7PPbF

Notes:



Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A.

Note that current limitations arising from heating of the device leads may occur with some lead mounting

arrangements. (Refer to AN-1140)



Repetitive rating; pulse width limited by max. junction temperature.



Limited by TJmax, starting TJ = 25°C, L = 105µH, RG = 50, IAS = 100A, VGS =10V.



ISD  100A, di/dt  1575A/µs, VDD  V(BR)DSS, TJ 175°C.



Pulse width

 400µs; duty cycle  2%.



Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.



Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.



R is measured at TJ approximately 90°C.



Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 45A, VGS =10V.



When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques

refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf

Absolute Maximium Rating

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

338

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

239

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

240

IDM

Pulsed Drain Current 

1450

PD @TC = 25°C

Maximum Power Dissipation

375

Linear Derating Factor

2.5

W/°C

VGS

Gate-to-Source Voltage

± 20

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Avalanche Characteristics

EAS (Thermally limited)

Single Pulse Avalanche Energy 

526

EAS (Thermally limited)

Single Pulse Avalanche Energy 

1029

IAR

Avalanche Current 

See Fig 14, 15, 23a, 23b

EAR

Repetitive Avalanche Energy 

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RJC

Junction-to-Case 

–––

0.40

°C/W

RJA

Junction-to-Ambient 

–––

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max.

Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

–––

mV/°C Reference to 25°C, ID = 1mA 

RDS(on)

Static Drain-to-Source On-Resistance

–––

1.15

1.4

 VGS = 10V, ID = 100A 

VGS(th)

Gate Threshold Voltage

2.1

–––

3.7

VDS = VGS, ID = 250µA

IDSS

Drain-to-Source Leakage Current

–––

1.0

µA

VDS = 60 V, VGS = 0V

–––

150

VDS = 60V,VGS = 0V,TJ =125°C

IGSS

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -20V

Gate Resistance

–––

2.2

–––



–––

1.4

–––

 VGS = 6.0V, ID = 50A 

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