BAP64-05

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Product data sheet

Rev. 5 — 28 April 2015

2 of 9

NXP Semiconductors

BAP64-05

Silicon PIN diode

4.

Marking

5.

Limiting values

6.

Thermal characteristics

7.

Characteristics

Table 3.

Marking

Type number

Marking

Description

BAP64-05

5K*

* = t : made in Malaysia

* = W : made in China

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Values are specified per diode.

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

-

175

V

forward current

-

100

mA

total power dissipation

250

mW

storage temperature

65

+150

C

junction temperature

65

+150

C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction to solder point

220

K/W

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

-

0.95

1.1

V

reverse current

-

-

10

A

-

-

1

A

diode capacitance

see Figure 1; f = 1 MHz;

-

0.52

-

pF

-

0.37

-

pF

-

0.23

0.35

pF