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IRGP4066DPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGP4066DPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRGP4066DPbF/IRGP4066D-EPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 20V, L = 10μH, RG = 10Ω. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Rθ is measured at T J of approximately 90°C. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100μA e ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —0.30— V/°C VGE = 0V, IC = 2.0mA (25°C-175°C) — 1.70 2.10 IC = 75A, VGE = 15V, TJ = 25°C d VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 — V IC = 75A, VGE = 15V, TJ = 150°C d —2.1 — IC = 75A, VGE = 15V, TJ = 175°C d VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 2.1mA ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -21 — mV/°C VCE = VGE, IC = 2.1mA (25°C - 175°C) gfe Forward Transconductance — 50 — S VCE = 50V, IC = 75A, PW = 60μs ICES Collector-to-Emitter Leakage Current — 1.0 100 μA VGE = 0V, VCE = 600V — 1040 — VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 2.23 3.0 V IF = 75A —1.8 — IF = 75A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±200 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 150 225 IC = 75A Qge Gate-to-Emitter Charge (turn-on) — 40 60 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 60 90 VCC = 400V Eon Turn-On Switching Loss — 2465 3360 IC = 75A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 2155 3040 μJ RG = 10 Ω, L = 200μH, TJ = 25°C Etotal Total Switching Loss — 4620 6400 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 50 70 IC = 75A, VCC = 400V, VGE = 15V tr Rise time — 70 90 ns RG = 10 Ω, L = 200μH, TJ = 25°C td(off) Turn-Off delay time — 200 225 tf Fall time — 60 80 Eon Turn-On Switching Loss — 3870 — IC = 75A, VCC = 400V, VGE=15V Eoff Turn-Off Switching Loss — 2815 — μJ RG=10 Ω, L=200μH, TJ = 175°C Etotal Total Switching Loss — 6685 — Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 50 — IC = 75A, VCC = 400V, VGE = 15V tr Rise time — 70 — ns RG = 10 Ω, L = 200μH td(off) Turn-Off delay time — 240 — TJ = 175°C tf Fall time — 70 — Cies Input Capacitance — 4440 — pF VGE = 0V Coes Output Capacitance — 245 — VCC = 30V Cres Reverse Transfer Capacitance — 130 — f = 1.0Mhz TJ = 175°C, IC = 300A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp 600V Rg = 10 Ω, VGE = +20V to 0V SCSOA Short Circuit Safe Operating Area 5 — — μs VCC = 400V, Vp Ã600V Rg = 10 Ω, VGE = +15V to 0V Erec Reverse Recovery Energy of the Diode — 470 — μJ TJ = 175°C trr Diode Reverse Recovery Time — 155 — ns VCC = 400V, IF = 75A Irr Peak Reverse Recovery Current — 27 — A VGE = 15V, Rg = 10 Ω, L = 60μH Conditions |
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