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IRGP4640DPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGP4640DPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 18 page  IRGS/SL/B/P4640D/EPbF 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 20, 2015 Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case (D2Pak, TO-220, TO-262) ––– ––– 0.60 °C/W Thermal Resistance Junction-to-Case (TO-247) ––– ––– 0.60 RθJC (Diode) Thermal Resistance Junction-to-Case (D2Pak, TO-220, TO-262) ––– ––– 1.53 Thermal Resistance Junction-to-Case (TO-247) ––– ––– 1.62 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface– TO 220, D2Pak, TO-262) ––– 0.50 ––– Thermal Resistance, Case-to-Sink (flat, greased surface– TO 247) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak, TO-262) ––– ––– 40 Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247) ––– ––– 40 Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220) ––– ––– 62 RθJC (IGBT) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) VCE(on) Collector-to-Emitter Saturation Voltage — 1.60 1.90 IC = 24A, VGE = 15V, TJ = 25°C — 1.90 — IC = 24A, VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 700µA ΔVGE(th)/ΔTJ Threshold Voltage Temp. Coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C) gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A, PW = 80µs ICES Collector-to-Emitter Leakage Current — 2.0 25 µA VGE = 0V, VCE = 600V — 775 — VGE = 0V, VCE = 600V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V VFM Diode Forward Voltage Drop — 1.8 2.6 V IF = 24A — 1.28 — IF = 24A, TJ = 175°C — 2.0 — IC = 24A, VGE = 15V, TJ = 175°C V |
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