IRGP4660DPBF datasheet(2/12 Pages) IRF

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IRGP4660DPbF/IRGP4660D-EPbF

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November 17, 2014

Notes:

VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω.

Rθ is measured at TJ of approximately 90°C.

Refer to AN-1086 for guidelines for measuring V

(BR)CES safely.

Pulse width limited by max. junction temperature.

Values influenced by parasitic L and C in measurement.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

VGE = 0V, IC = 150μA e

ΔV(BR)CES/ΔTJ

Temperature Coeff. of Breakdown Voltage

—

0.30

—

V/°C VGE = 0V, IC = 1mA (25°C-175°C)

—

1.60

1.90

IC = 48A, VGE = 15V, TJ = 25°C

VCE(on)

Collector-to-Emitter Saturation Voltage

—

1.90

—

IC = 48A, VGE = 15V, TJ = 150°C

—2.00

—

IC = 48A, VGE = 15V, TJ = 175°C

VGE(th)

Gate Threshold Voltage

4.0

—

6.5

VCE = VGE, IC = 1.4mA

ΔVGE(th)/ΔTJ

Threshold Voltage temp. coefficient

—

-21

—

mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)

gfe

Forward Transconductance

—

VCE = 50V, IC = 48A, PW = 80μs

ICES

Collector-to-Emitter Leakage Current

—

1.0

150

VGE = 0V, VCE = 600V

—

450

1000

VGE = 0V, VCE = 600V, TJ = 175°C

VFM

Diode Forward Voltage Drop

—

1.95

2.91

IF = 48A

—1.45

—

IF = 48A, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Total Gate Charge (turn-on)

—

140

IC = 48A

Qge

Gate-to-Emitter Charge (turn-on)

—

VGE = 15V

Qgc

Gate-to-Collector Charge (turn-on)

—

VCC = 400V

Eon

Turn-On Switching Loss

—

625

1141

IC = 48A, VCC = 400V, VGE = 15V

Eoff

Turn-Off Switching Loss

—

1275

1481

μJRG = 10

Ω, L = 200μH, LS = 150nH, TJ = 25°C

Etotal

Total Switching Loss

—

1900

2622

Energy losses include tail & diode reverse recovery

td(on)

Turn-On delay time

—

IC = 48A, VCC = 400V, VGE = 15V

Rise time

—

4056ns

RG = 10

Ω, L = 200μH, LS = 150nH, TJ = 25°C

td(off)

Turn-Off delay time

—

145

176

Fall time

—

Eon

Turn-On Switching Loss

—

1625

—

IC = 48A, VCC = 400V, VGE=15V

Eoff

Turn-Off Switching Loss

—

1585

—

μJRG=10

Ω, L=200μH, LS=150nH, TJ = 175°C

Etotal

Total Switching Loss

—

3210

—

Energy losses include tail & diode reverse recovery

td(on)

Turn-On delay time

—

IC = 48A, VCC = 400V, VGE = 15V

Rise time

—

RG = 10

Ω, L = 200μH, LS = 150nH

td(off)

Turn-Off delay time

—

165

—

TJ = 175°C

Fall time

—

Cies

Input Capacitance

—

3025

—

VGE = 0V

Coes

Output Capacitance

—

245

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

f = 1.0Mhz

TJ = 175°C, IC = 192A

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

VCC = 480V, Vp =600V

Rg = 10

Ω, VGE = +15V to 0V

SCSOA

Short Circuit Safe Operating Area

—

μsVCC = 400V, Vp =600V

Rg = 10

Ω, VGE = +15V to 0V

Erec

Reverse Recovery Energy of the Diode

—

845

—

μJTJ = 175°C

trr

Diode Reverse Recovery Time

—

115

—

VCC = 400V, IF = 48A

Irr

Peak Reverse Recovery Current

—

VGE = 15V, Rg = 10

Ω, L =200μH, Ls = 150nH

Conditions

μA

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