IRGS4615DPBF datasheet(2/13 Pages) IRF

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IRGS/B4615DPbF

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November 14, 2014

Notes:

VCC = 80% (VCES), VGE = 20V, L = 100 μH, RG = 47 Ω.

Rθ is measured at TJ approximately 90°C.

Refer to AN-1086 for guidelines for measuring V

(BR)CES safely.

Pulse width limited by max. junction temperature.

Values influenced by parasitic L and C in measurement

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application

note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

VGE = 0V, Ic =100 μA e

ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —

0.3

—

V/°C VGE = 0V, Ic = 250μA ( 25 -175

oC )

—1.55

1.85

IC = 8.0A, VGE = 15V, TJ = 25°C

VCE(on)

Collector-to-Emitter Saturation Voltage

—

1.95

—

IC = 8.0A, VGE = 15V, TJ = 150°C

—2.00

—

IC = 8.0A, VGE = 15V, TJ = 175°C

VGE(th)

Gate Threshold Voltage

4.0

—

6.5

VCE = VGE, IC = 250μA

ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient

—

-18

—mV/°C VCE = VGE, IC = 250μA ( 25 -175

oC )

gfe

Forward Transconductance

—

5.6

—

VCE = 50V, IC = 8.0A, PW =80μs

ICES

——

μA

VGE = 0V,VCE = 600V

—400

—

VGE = 0V, VCE = 600V, TJ =175°C

VFM

—

1.80

2.8

IF = 8.0A

—1.30

—

IF = 8.0A, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ± 20 V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Total Gate Charge (turn-on)

—

IC = 8.0A

Qge

Gate-to-Emitter Charge (turn-on)

—

VCC = 400V

Qgc

Gate-to-Collector Charge (turn-on)

—

VGE = 15V

Eon

Turn-On Switching Loss

—

IC = 8.0A, VCC = 400V, VGE = 15V

Eoff

Turn-Off Switching Loss

—

145

—

μJRG = 47Ω, L=1mH, LS= 150nH, TJ = 25°C

Etotal

Total Switching Loss

—

215

—

Energy losses include tail and diode reverse recovery

td(on)

Turn-On delay time

—

IC = 8.0A, VCC = 400V

Rise time

—

—ns

RG = 47Ω, L=1mH, LS= 150nH

td(off)

Turn-Off delay time

—

—TJ = 25°C

Fall time

—

Eon

Turn-On Switching Loss

—

165

—

IC = 8.0A, VCC = 400V, VGE = 15V

Eoff

Turn-Off Switching Loss

—

240

—

μJ

RG = 47Ω, L=1mH, LS= 150nH, TJ = 175°C

Etotal

Total Switching Loss

—

405

—

Energy losses include tail and diode reverse recovery

td(on)

Turn-On delay time

—

IC = 8.0A, VCC = 400V

Rise time

—

—ns

RG = 47Ω, L=1mH, LS= 150nH

td(off)

Turn-Off delay time

—

117

—TJ = 175°C

Fall time

—

Cies

Input Capacitance

—

535

—

VGE = 0V

Coes

Output Capacitance

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

f = 1Mhz

TJ = 175°C, IC = 32A

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

VCC = 480V, Vp =600V

RG = 47Ω, VGE = +20V to 0V

VCC = 400V, Vp =600V

RG = 47Ω, VGE = +15V to 0V

Erec

Reverse recovery energy of the diode

—

165

—

μJ

TJ = 175

trr

Diode Reverse recovery time

—

VCC = 400V, IF = 8.0A

Irr

Peak Reverse Recovery Current

—

VGE = 15V, Rg = 47Ω, L=1mH, LS=150nH

Diode Forward Voltage Drop

Collector-to-Emitter Leakage Current

SCSOA

Short Circuit Safe Operating Area

—

μs

Conditions

—

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction-to-Case -(each IGBT)

–––

1.51

RθJC

Thermal Resistance, Junction-to-Case -(each Diode)

–––

3.66

RθCS

Thermal Resistance, Case-to-Sink (flat, greased surface)

–––

0.5

–––

Thermal Resistance, Junction-to-Ambient (PCB mount D2PAK)

–––

Thermal Resistance, Junction-to-Ambient ( Socket mount: TO-220)

–––

RθJA

°C/W

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