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MAX1917EEE Datasheet(PDF) 16 Page - Maxim Integrated Products |
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MAX1917EEE Datasheet(HTML) 16 Page - Maxim Integrated Products |
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16 / 18 page ![]() Tracking, Sinking and Sourcing, Synchronous Buck Controller for DDR Memory and Termination Supplies 16 ______________________________________________________________________________________ The actual microfarad capacitance value required relates to the physical size needed to achieve low ESR, as well as to the chemistry of the capacitor technology. As a result, the capacitor is usually selected by ESR and voltage rating rather than by capacitance value (this is true of tantalums, OS-CONs, POSCAPs, and other electrolytics). Input Capacitor Selection The input capacitor must meet the ripple current requirement (IRMS) imposed by the switching currents. Nontantalum chemistries (ceramic, aluminum, or OS- CON) are preferred due to their superior surge current capacity: Setting the Current Limit The minimum current-limit threshold must be great enough to support the maximum load current when the current limit is at the minimum tolerance value. The val- ley of the inductor current occurs at ILOAD(MAX) minus half of the ripple current. For example: ILIMIT(LOW) > ILOAD(MAX) - (LIR / 2) ✕ ILOAD(MAX) where ILIMIT(LOW) = minimum current-limit threshold voltage divided by the RDS(ON) of Q2. For the MAX1917, the minimum current-limit threshold (100mV default setting) is 50mV. Use the worst-case maximum value for RDS(ON) from the MOSFET Q2 data sheet, and add some margin for the rise in RDS(ON) with tempera- ture. A good general rule is to allow 0.5% additional resistance for each °C of temperature rise. When adjusting the current limit, use a 1% tolerance RILIM resistor to prevent a significant increase of errors in the current-limit tolerance. Setting the Voltage Positioning The droop resistor, RDRP, in series with the output inductor before the output capacitor, sets the droop voltage, VDRP. Choose RDRP such that the output volt- age at the maximum load current, including ripple, is just above the lower limit of the output tolerance: RDRP introduces some power dissipation, which is given by: PD(DRP) = RDRP ✕ IOUT(MAX)2 RDRP should be chosen to handle this power dissipation. MOSFET Power Dissipation Worst-case conduction losses occur at the duty-factor extremes. For the high-side MOSFET, the worst-case power dissipation due to resistance occurs at minimum input voltage: PD(Q1) = (VOUT / VIN(MIN)) ✕ (ILOAD2) ✕ (RDS(ON)) Generally, a small high-side MOSFET is desired in order to reduce switching losses at high input voltages. However, the RDS(ON) required to stay within package power-dissipation limits often limits how small the MOSFET can be. Again, the optimum occurs when the switching (AC) losses equal the conduction (RDS(ON)) losses. Calculating the power dissipation in Q1 due to switching losses is challenging because it must allow for difficult-to-quantify factors that influence the turn-on and turn-off times. These factors include the internal gate resistance, gate charge, threshold voltage, source inductance, and PC board layout characteristics. The fol- lowing switching loss calculation provides only a very rough estimate and is no substitute for breadboard eval- uation, preferably including a check using a thermocou- ple mounted on Q1: where CRSS is the reverse transfer capacitance of Q1 and IGATE is the peak gate-drive source/sink current. For the low-side MOSFET, Q2, the worst-case power dissipation always occurs at maximum input voltage: PD(Q2) = (1 - VOUT / VIN(MAX)) ✕ ILOAD2 ✕ RDS(ON) PD SWITCHING CV f I I RSS IN MAX LOAD GATE () () = ×× × 2 R VV V I DRP OUT TYP OUT MIN RIPPLE OUT MAX < −− () ( ) () / 2 II VV V V RMS LOAD OUT IN OUT IN =× ×− () |
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