MAX1985ETP datasheet(2/17 Pages) MAXIM

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Ultra-High-Efficiency White

LED Drivers

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ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(Circuit of Figure 1; VIN = 3.3V, SETI = BITA = BITB = BITC = SEL = IN, MODE = GND, COUT = 4.7µF, CREF = 0.22µF, TA = 0°C to +85°C,

unless otherwise noted. Typical values are at TA = +25°C.)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

OUT, IN, BITA, BITB, BITC, LD1, LD2, LD3, LD4,

LD5, LD6, LD7, LD8 to GND ................................-0.3V to +6V

LDG to GND........................................................................±0.3V

LX to GND ................................................-0.3V to (VOUT + 0.3V)

SETI, REF, MODE, SEL to GND ...................-0.3V to (VIN + 0.3V)

Continuous Power Dissipation (TA = +70°C)

16-Pin Thin QFN (derate 16.9mW/°C above +70°C) ...1349mW

20-Pin Thin QFN (derate 16.9mW/°C above +70°C) ...1349mW

Operating Temperature Range ...........................-40°C to +85°C

Junction Temperature ......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

IN Supply Range

2.7

5.5

IN Undervoltage Lockout Threshold

50mV typical hysteresis

2.2

2.4

2.6

IN Quiescent Current

BITA = BITB = BITC = IN, LD1 to LD8 = GND

400

600

µA

IN Shutdown Current

BITA = BITB = BITC = GND

0.1

µA

REF Output Voltage

IREF = 0

1.230

1.250

1.270

REF Line Regulation

2.7V < VIN < 5.5V

0.2

REF Load Regulation

-1µA < IREF < +50µA

Oscillator Frequency

0.8

1.2

MHz

Oscillator Maximum Duty Cycle

OUT Overvoltage Protection (OVP)

Threshold

VLD1 to VLD8 = 50mV, OUT rising, 100mV typical

hysteresis

5.1

5.3

5.5

INTERNAL MOSFET SWITCHES

N-Channel MOSFET On-Resistance

ILX = 200mA

0.4

0.8

Ω

N-Channel MOSFET Leakage Current

VLX = 5.5V, BITA = BITB = BITC = GND

0.1

µA

P-Channel MOSFET On-Resistance

ILX = 200mA

0.5

Ω

P-Channel MOSFET Leakage Current

LX = GND, VOUT = 5.5V, BITA = BITB = BITC = GND

0.1

µA

MAX1984

0.50

0.65

0.81

MAX1985

0.40

0.52

0.65

N-Channel MOSFET Current Limit

MAX1986

0.30

0.39

0.52

CONTROL INPUTS

BITA, BITB, BITC Input Logic Low

Level

2.7V < VIN < 5.5V

0.4

BITA, BITB, BITC Input Logic High

Level

2.7V < VIN < 5.5V

1.6

MODE Input Logic Low Level

2.7V < VIN < 5.5V

0.4

MODE Input Logic High Level

2.7V < VIN < 5.5V

VIN - 0.4

MODE, BITA, BITB, BITC Input Bias

Current

2.7V < VIN < 5.5V

0.01

µA

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