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2N6383 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part # 2N6383
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Direct Link  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

2N6383 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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JMnic
Product Specification
2
Silicon NPN Power Transistors
2N6383 2N6384 2N6385
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6383
40
2N6384
60
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6385
IC=0.2A ;IB=0
80
V
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=10mA
2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A ;IB=100mA
3.0
V
VBE-1
Base-emitter on voltage
IC=5A ; VCE=3V
2.8
V
VBE-2
Base-emitter on voltage
IC=10A ; VCE=3V
4.5
V
2N6383
VCE=40V; IB=0
2N6384
VCE=60V; IB=0
ICEO
Collector cut-off current
2N6385
VCE=80V; IB=0
1.0
mA
2N6383
VCE=40V; VBE=-1.5V
TC=125℃
0.3
3.0
2N6384
VCE=60V; VBE=-1.5V
TC=125℃
0.3
3.0
ICEX
Collector cut-off current
2N6385
VCE=80V; VBE=-1.5V
TC=125℃
0.3
3.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
mA
hFE-1
DC current gain
IC=5A ; VCE=3V
1000
20000
hFE-2
DC current gain
IC=10A ; VCE=3V
100
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
200
pF



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