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IRFE110 Datasheet(PDF) 2 Page - International Rectifier

Part # IRFE110
Description  Simple Drive Requirements
PDF  7 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFE110 Datasheet(HTML) 2 Page - International Rectifier

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IRFE110
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction to Case
—
—
8.3
RthJ-PCB
Junction to PC Board
—
—
27"""
Soldered to a copper clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
—
3.5
ISM
Pulse Source Current (Body Diode) ➀
——
1 4
VSD
Diode Forward Voltage
—
—
1.5
V
Tj = 25°C, IS =3.5A, VGS = 0V ➃
trr
Reverse Recovery Time
—
—
180
nS
Tj = 25°C, IF = 3.5A, di/dt ≤100A/µs
QRR
Reverse Recovery Charge
—
—
2.0
µc
VDD ≤50V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
—
—
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
—
0.12
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
—
0.60
VGS = 10V, ID =2.25A➃
Resistance
—
—
0.69
VGS =10V, ID =3.5A ➃
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID =250µA
gfs
Forward Transconductance
0.8
—
—
S ( )
VDS > 15V, IDS =2.25A➃
IDSS
Zero Gate Voltage Drain Current
—
—
2 5
VDS=80V, VGS=0V
—
—
250
VDS =80V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
—
100
VGS =20V
IGSS
Gate-to-Source Leakage Reverse
—
—
-100
VGS =-20V
Qg
Total Gate Charge
—
—
6.6
VGS =10V, ID= 3.5A
Qgs
Gate-to-Source Charge
—
—
1.7
nC
VDS =50V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
—
3.5
td(on)
Turn-On Delay Time
—
—
1 5
VDD =50V, ID =3.5A,
t r
Rise Time
—
—
2 5
RG =7.5Ω
td(off)
Turn-Off Delay Time
—
—
2 5
tf
Fall Time
—
—
2 0
LS + LD
Total Inductance
—
6.1
—
Ciss
Input Capacitance
—
190
VGS = 0V, VDS =25V
Coss
Output Capacitance
—
8 6
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
1 3
—
nA
nH
ns
µA
Ω
Measured from the center of
drain pad to center of source
pad



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