Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

27.4

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

17

IDM

Pulsed Drain Current ➀

110

PD @ TC = 25°C

Max. Power Dissipation

150

W

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

500

mJ

IAR

Avalanche Current ➀

27.4

A

EAR

Repetitive Avalanche Energy ➀

15

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

5.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300(for 5 seconds)

Weight

2.6 (Typical)

g

PD - 91549C

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance.

HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required.

The

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

A

POWER MOSFET

SURFACE MOUNT(SMD-1)

1/28/01

www.irf.com

1

SMD-1

Product Summary

Part Number

IRFN250

0.100

Ω

27.4A

Features:

For footnotes refer to the last page

IRFN250

JANTX2N7225U

JANTXV2N7225U

REF:MIL-PRF-19500/592

200V, N-CHANNEL

HEXFET

®

MOSFETTECHNOLOGY