IRHE9110

Pre-Irradiation

2

www.irf.com

For footnotes refer to the last page

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

—

—

8.3

RthJPCB

Junction-to-PC Board

—

19

—

Solder to a copper clad PC Board

RthJA

Junction-to-Air

75

Typical Socket

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

-2.3

ISM

Pulse Source Current (Body Diode)

À

—

—

-9.2

VSD Diode Forward Voltage

—

—

2.6

V

trr

Reverse Recovery Time

—

—

138

nS

Tj = 25°C, IF = -2.3A, di/dt ≤ -100A/µs

QRR Reverse Recovery Charge

—

—

520

nC

VDD ≤ -25V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-100

—

—

V

VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

-0.094

—

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

1.1

Ω

VGS = -12V, ID = -1.5A

Resistance

VGS(th)

Gate Threshold Voltage

-2.0

—

-4.0

V

VDS = VGS, ID = -1.0mA

gfs

Forward Transconductance

0.7

—

—

S ( )

VDS = -15V, IDS = -1.5A Ã

IDSS

Zero Gate Voltage Drain Current

—

—

-25

VDS= -80V ,VGS=0V

—

—

-250

VDS = -80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

—

—

100

VGS = 20V

Qg

Total Gate Charge

—

—

16

VGS = -12V, ID = -2.3A

Qgs

Gate-to-Source Charge

—

—

4.3

nC

VDS = -50V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

3.3

Turn-On Delay Time

—

—

21

VDD = -50V, ID = -2.3A,

tr

Rise Time

—

—

17

VGS = -12V, RG = 7.5Ω

Turn-Off Delay Time

—

—

32

tf

Fall Time

—

—

32

LS + LD

Total Inductance

—

6.1

—

Ciss

Input Capacitance

—

290

—

VGS = 0V, VDS = -25V

Coss

Output Capacitance

—

94

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

13

—

nA

Ã

nH

ns

µA

Measured from the center of

drain pad to center of source pad

Rg

Internal Gate Resistance

20.5

Ω

f = 1.0MHz, open drain