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IRHM9130 Datasheet(PDF) 1 Page - International Rectifier |
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IRHM9130 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current -11 ID @ VGS = -12V, TC = 100°C Continuous Drain Current -7.0 IDM Pulsed Drain Current ➀ -44 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 190 mJ IAR Avalanche Current ➀ -11 A EAR Repetitive Avalanche Energy ➀ 7.5 mJ dv/dt Peak Diode Recovery dv/dt ➂ -10 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s) Weight 9.3 (typical) g PD - 90888C Pre-Irradiation International Rectifier’s RAD-Hard HEXFETTM technol- ogy provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been character- ized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. oC A 02/18/03 www.irf.com 1 TO-254AA Product Summary Part Number Radiation Level RDS(on) ID IRHM9130 100K Rads (Si) 0.3 Ω -11A IRHM93130 300K Rads (Si) 0.3 Ω -11A Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n LowTotal Gate Charge n Proton Tolerant n SimpleDriveRequirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight For footnotes refer to the last page RADIATION HARDENED IRHM9130 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-254AA) RAD-Hard ™ HEXFET ® TECHNOLOGY |
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Similar Description - IRHM9130 |
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