Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-200

—

—

V

VGS = 0V, ID = -1.0 mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

-0.10

—

V/°C

Reference to 25°C, ID = -1.0 mA

Voltage

RDS(on)

Static Drain-to-Source

—

—

0.8

VGS = -12V, ID = -4.1A

On-State Resistance

—

—

0.92

Ω

VGS = -12V, ID = -6.5A

VGS(th)

Gate Threshold Voltage

-2.0

—

-4.0

V

VDS = VGS, ID = -1.0 mA

gfs

Forward Transconductance

2.2

—

—

S (

)

VDS > -15V, IDS = -6.5A„

IDSS

Zero Gate Voltage Drain Current

—

—

-25

VDS = 0.8 x Max. Rating,VGS = 0V

—

—

-250

VDS = 0.8 x Max. Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

—

—

100

VGS = 20V

Qg

Total Gate Charge

—

—

35

VGS = -12V, ID = -6.5A

Qgs

Gate-to-Source Charge

—

—

10

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain (“Miller”) Charge

—

—

25

td(on)

Turn-On Delay Time

—

—

50

VDD = -100V, ID = -6.5A, RG = 2.35Ω

tr

Rise Time

—

—

90

td(off)

Turn-Off Delay Time

—

—

90

tf

Fall Time

—

—

90

LD

Internal Drain Inductance

—

5.0

—

LS

Internal Source Inductance

—

15

—

Ciss

Input Capacitance

—

1100

—

VGS = 0V, VDS = -25V

Coss

Output Capacitance

—

310

—

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

—

55

—

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

IS

Continuous Source Current

—

—

-6.5

Modified MOSFET symbol

(Body Diode)

showing the integral Reverse

ISM

Pulse Source Current

—

—

-26

p-n junction rectifier.

(Body Diode) Œ

VSD

Diode Forward Voltage

—

—

-5.0

V

trr

Reverse Recovery Time

—

—

400

ns

Tj = 25°C, IF = -6.5A, di/dt ≤ -100 A/µs

QRR

Reverse Recovery Charge

—

—

3.0

µCVDD ≤ -50V „

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

RthJC

Junction-to-Case

—

—

1.67

RthJA

Junction-to-Ambient

—

30

—

IRHM9230 Device

Pre-Radiation

„

µA

nC

pF

nH

ns

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Modified MOSFET

symbol showing the

internal inductances.

nA

Parameter

Min. Typ. Max. Units

Test Conditions

K/W

…

Notes: See page 4

A