www.irf.com

3

Pre-Irradiation

IRHMS67264, 2N7586T1

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Typical Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

1. Part numbers IRHMS67264 and IRHMS63264

Parameter

Up to 300K Rads (Si)

Units

Test Conditions

Min

Max

Drain-to-Source Breakdown Voltage

250

—

V

Gate Threshold Voltage

2.0

4.0

Gate-to-Source Leakage Forward

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

Zero Gate Voltage Drain Current

—

10

µA

Static Drain-to-Source

„

On-State Resistance (TO-3)

—

0.041

Ω

Static Drain-to-Sourcee On-State

„

Diode Forward Voltage

„

—

1.2

V

Resistance (Low Ohmic TO-254AA)

—

0.041

Ω

1

Table 2. Typical Single Event Effect Safe Operating Area

LET

Energy

Range

VDS (V)

(MeV)

(µm)

@VGS=

@VGS=

@VGS=

@VGS=

@VGS=

0V

-5V

-10V

-15V

-20V

44 ± 5%

1350 ± 5%

125 ± 10%

250

250

250

250

40

61 ± 5%

825 ± 5%

66 ± 7.5%

250

250

250

50

-

90 ± 5%

1470 ± 5%

80 ± 5%

75

75

-

-

-

0

50

100

150

200

250

300

-20

-15

-10

-5

0

Bias VGS (V)

LET=44 ± 5%

LET=61 ± 5%

LET=90 ± 5%