LP2985 datasheet(17/29 Pages) TI

17 / 29 page

LP2985

2.2 F

10 nF

1 F

VIN

VOUT

ON/OFF

tied to VIN

if not used

LP2985

www.ti.com

SLVS522O – JULY 2004 – REVISED JANUARY 2015

10 Layout

10.1 Layout Guidelines

•

It is recommended that the input pin be bypassed to ground with a bypass-capacitor.

•

The optimum placement of the bypass capacitor is closest to the VIN of the device and GND of the system.

Care must be taken to minimize the loop area formed by the bypass-capacitor connection, the VIN pin, and

the GND pin of the system.

•

For operation at full-rated load, it is recommended to use wide trace lengths to eliminate IR drop and heat

dissipation.

10.2 Layout Example

Figure 32. Layout Diagram

11 Device and Documentation Support

11.1 Trademarks

All trademarks are the property of their respective owners.

11.2 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

11.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

Submit Documentation Feedback

LP2985 Datasheet(PDF) 17 Page - Texas Instruments