41T datasheet(2/5 Pages) NELLSEMI

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SEMICONDUCTOR

RoHS

41T Series

(2)

MAX.

Vt0

(2)

Threshold voltage

MAX.

Dynamic resistance

MAX.

IDRM

IRRM

MAX.

Note 1: Minimum l

is guaranted at 5% of l

max.

Note 2: For both polarities of A2 referenced to A1.

= 60 A,

t = 380 µs

T = 125°C

T = 25°C

T = 125°C

T = 25°C

1.55

0.85

µA

mΩ

STATIC CHARACTERISTICS

UNIT

VALUE

TEST CONDITIONS

SYMBOL

(2)

V = V

DRM

V = V

RRM

41Txxxx

Unit

(1)

I - II - III

VGT

I - II - III

VGD

I - II - III

(2)

MAX.

I - III

MAX.

(2)

dV/dt

MIN.

(dI/dt)c(2)

A/ms

MAX.

MIN.

V = 12 V, R = 30Ω

V = V

, R = 3.3KΩ

DRM

T = 125°C

I = 500 mA

I = 1.2 I

V = 67% V

gate open ,T = 125°C

DRM

Without snubber, T = 125°C

1.3

0.2

100

1000

V/µs

TEST CONDITIONS

QUADRANT

SYMBOL

SNUBBERLESS and Logic level (3 quadrants)

ºC unless otherwise specified)

J= 25

ELECTRICAL CHARACTERISTICS

THERMAL RESISTANCE

Rth(j-c)

Junction to case (AC)

Rth(j-a)

Junction to ambient

0.9

°C/W

UNIT

VALUE

SYMBOL

TO-3P

TO-3P Insulated

0.6

TO-3P, TO-3P Insulated

S = Copper surface under tab.

ORDERING INFORMATION

41TxxB-yy

ORDERING TYPE

MARKING

PACKAGE

WEIGHT

BASE Q TY

DELIVERY MODE

TO-3P

4.3g

Tube

PRODUCT SELECTOR

PART NUMBER

VOLTAGE (x x)

SENSITIVITY

PACKAGE

800 V

50 mA

1600 V

41TxxB-BW/41TxxBl-BW

TYPE

1000 V

Snubberless

BI: Insulated TO-3P package

TO-3P

1200 V

41TxxBI-yy

4.8g

Tube

Note: xx = voltage, yy = sensitivity

TO-3P insulated

600 V

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