OM6025SC datasheet(4/4 Pages) IRF

4 / 4 page

OM6025SC - OM6032SC

3.1

205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

ELECTRICAL CHARACTERISTICS:

OM6027SC, OM6028SC (TC = 25° unless otherwise noted)

Characteristic

Symbol

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)

V(BR)DSS

1000

Vdc

Zero Gate Voltage Drain

IDSS

mAdc

(VDS = 1000 V, VGS = 0)

0.25

(VDS = 1000 V, VGS = 0, TJ = 125° C)

1.0

Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)

IGSSF

100

nAdc

Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)

IGSSR

100

nAdc

ON CHARACTERISTICS

Gate-Threshold Voltage

VGS(th)

Vdc

(VDS = VGS, ID = 0.25 mAdc

2.0

3.0

4.0

(TJ = 125° C)

1.5

3.5

Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 5 Adc)

rDS(on)

1.3

Ohm

Drain-Source On-Voltage (VGS = 10 Vdc)

VDS(on)

Vdc

(ID = 10 A)

(ID = 5 A, TJ = 125° C)

15.3

Forward Transconductance (VDS = 15 Vdc, ID = 5 Adc)

gFS

5.0

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 V, VGS = 0,

Ciss

3900

Output Capacitance

f = 1.0 MHz)

Coss

300

Transfer Capacitance

Crss

-65-

SWITCHING CHARACTERISTICS

Turn-On Delay Time

td(on)

-40-

Rise Time

(VDD = 250 V, ID = 5 A,

100

Turn-Off Delay Time

Rgen = 4.3 ohms)

td(off)

100

Fall Time

100

Total Gate Charge

(VDS = 400 V, ID = 10 A,

100

140

Gate-Source Charge

VGS = 10 V)

Qgs

-20-

Gate-Drain Charge

Qgd

-40-

SOURCE DRAIN DIODE CHARACTERISTICS

Forward On-Voltage

VSD

1.5

Vdc

Forward Turn-On Time

(IS = 10 A, d/dt = 100 A/µs)

ton

Reverse Recovery Time

trr

600

1000

* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%

** Limited by circuit inductance

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