CHA2266

RoHS COMPLIANT

Ref. : DSCHA22667082- 23 Mar 07

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12.5-17GHz Low-Noise Driver Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2266 is a self biased, low-noise

high gain driver amplifier. It is designed

mainly

for

VSAT

applications

in

Ku-

band. The backside of the chip is both RF

and DC grounded. This helps to simplify

the assembly process.

The circuit is manufactured on a standard

GaAs pHEMT process, with via holes

through the substrate, air bridges and

electron beam gate lithography.

Main Features

Broadband performance 12.5–17GHz

2.5dB noise figure

34dB gain, +/- 0.5dB gain flatness

Low DC power consumption:130mA

Saturated output power : 16dBm

Chip size 2.32 x 1.02 x 0.1mm

( Vds = 4V, Ids = 130mA )

4,1

2,9

2,5

2,0

1,9

1,6

1,5

1,5

2,2

-20

-15

-10

-5

0

5

10

15

20

25

30

35

40

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

Frequency / GHz

MS11

MS21

MS22

NF

Main Characteristics

Tamb=+25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

12.5

17

GHz

G

Small signal gain

31

34

dB

NF

Noise Figure

2.5

3

dB

P1dB

Output power at 1 dB gain

compression

14.5

dBm

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

VD 1

VD 2

IN

OUT